GaN based Power Amplifier
Small footprint S-Band 150W, GaN (Gallium Nitride) based device operates in Pulsed Mode and requires 50V DC Supply.
Overview
Mistral’s S-Band 150W Power Amplifier is an energy-efficient, compact GaN-based power amplifier device that operates in pulsed mode. The GaN based Power Amplifier hosts an on-board power supply sequencing circuit that manages the order and timing of the gate (VGS) and drain (VDD) bias voltages to ensure the safe working of GaN devices.
The Pulse Mode Power Amplifier, utilizing GaN technology, requires a 50V DC supply, with the onboard platform efficiently generating the other essential voltages. The Input and Output Impedance is matched to 50 Ohm. The device has SMA Female Type RF Connectors and is best suited for Radar Applications.
TECHNICAL SPECIFICATIONS
- Operating Frequency : 3.1 to 3.5GHz (S-BAND)
- Power Amplifiers : Gallium Nitrate (GaN) HEMT
- Input/Output Impedance : Matched to 50Ω
- Efficiency : 45%
- Application : Radar Systems
- GaN PA Baising : Integrated in the Module
- RF Connectors : SMA Female Type
- Power Supply and Control : D-Sub Connectors
